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New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  1. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  2. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  3. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  4. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  5. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  6. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  7. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  8. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product
  9. New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product

New and Original IRFB4127PBF TO-220 Power MOSFET Transistor High Performance IRFB4127 Product

IRFP260MPBF MOSFET

ProduktattributAttributwertWählen Sie Attribut aus
Produktkategorie:MOSFETs
RoHS:
Und
Durchgangsloch
TO-220-3
N-Channel
1 Kanal
200 V
76 A
20 mOhms
– 20 V, + 20 V
1.8 V
100 nC
– 55 C
+ 175 C
375 W
Enhancement
Rohr
Marke:
Konfiguration:Einzel
Herbstzeit:22 ns
Forward Transconductance – Min:79 S
Height:15.65 mm
Length:10 mm
Produkttyp:MOSFETs
Aufstiegszeit:18 ns
1000
Unterkategorie:Transistoren
Transistor Type:1 N-Channel
Typical Turn-Off Delay Time:56 ns
Typical Turn-On Delay Time:17 ns
Width:4.4 mm
Stückgewicht:0.068784 oz
Gewicht0.001 kg
Abmessungen0.5 cm

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